Open AccessInfluence of GaAs substrate misorientation on gallium and arsenic evaporation rates
Author(s) -
A. A. Spirina,
Nataliya L. Shwartz
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1851/1/012001
Subject(s) - misorientation , gallium , arsenic , desorption , evaporation , vicinal , substrate (aquarium) , materials science , layer (electronics) , epitaxy , analytical chemistry (journal) , chemistry , metallurgy , nanotechnology , adsorption , geology , thermodynamics , physics , chromatography , microstructure , oceanography , organic chemistry , grain boundary
The dependence of the Ga and As evaporation rates on GaAs(111)A substrate misorientation was analyzed using Monte Carlo simulation. The gallium and arsenic desorption rates are proportional to the step density of vicinal substrates at congruent (layer-by-layer) evaporation. With incongruent evaporation (gallium droplet formation on the surface), the arsenic desorption rate weakly depends on the substrate misorientation and the gallium desorption rate is independent of it.