Open AccessStudy on the Boost Converter with Parasitic Parameters of SiC MOSFET
Author(s) -
Yifan Yin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1846/1/012061
Subject(s) - boost converter , mosfet , parasitic capacitance , electronic engineering , buck–boost converter , transistor , power (physics) , capacitance , power semiconductor device , power mosfet , electrical engineering , computer science , engineering , voltage , physics , electrode , quantum mechanics
As a new type of transistors, SiC MOSFETs have excellent performance on switching speed and are capable to improve the energy efficiency and energy density of power conversion devices. On the other hand, the parasitic parameters associated with them bring potential problems when designing switching regulators or analysing the converter performances. In this paper, a boost converter model based on the switching characteristics of SiC MOSFETs is presented for describing the power conversion behaviours comprehensively and accurately. Applying that model, a feedback control system is designed and simulated to explore the influence of each parasitic capacitance on the boost converter. Also, the power loss of the converter during steady operation is analysed and simulated. The research method and simulation results in this paper can be referenced for the design of boost converter with parasitic parameters of SiC MOSFET.