Open AccessPreparation and Characterization of Mixed In2O3 –AgxO Nanostructure Thin Films on porous silicon as NH3 High Gas Sensor
Author(s) -
Hajar H. Nayel,
Hamid S. AL-Jumaili
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1829/1/012021
Subject(s) - materials science , porous silicon , nanostructure , silicon , crystallite , thin film , analytical chemistry (journal) , porosity , conductivity , oxide , chemical engineering , nanotechnology , optoelectronics , composite material , chemistry , chromatography , metallurgy , engineering
Mixed nanostructured thin films composed of In 2 O 3 – Ag x O, were synthesized on glass and porous silicon to produce NH 3 -gas sensor. The films’ structure of the sensor was analyzed by XRD and AFM. The results obtained that polycrystalline nanostructure thin films were prepared. The optical properties indicate that the transmission and the energy gap were decreased with the increase in Ag x O ratio. The sensor conductivity changed from n-type for In 2 O 3 up to 10 Vol% Ag x O to p-type with mixed oxides. The synthesis gas sensor gives sensitivity toward 40 ppm NH 3 gas at different temperatures (50, 100, 150 and 200) ˚C. The maximum sensitivity of mixed films on porous silicon for 15% Ag x O ratio is 94.13% with a response time of 11.85 s and a recovery time of 20 s. Porous silicon improves the sensitivity of the prepared sensor by a factor of two with respect to the sensor over the glass. The good sensor properties of In 2 O 3 – Ag x O nanostructure mixed oxide at a low temperature indicated as highly efficient NH 3 gas sensor.