Open AccessEffect of Thermal Annealing on the Electrical Properties and Gas Sensing for Pulsed Laser Deposition Cr2O3Thin Films
Author(s) -
Souad G. Kaleel,
Mahdi Hasan Suhail,
Hawraa Kamil
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1829/1/012020
Subject(s) - materials science , annealing (glass) , pulsed laser deposition , hall effect , thin film , analytical chemistry (journal) , laser , substrate (aquarium) , electrical resistivity and conductivity , pulse duration , optoelectronics , optics , composite material , chemistry , nanotechnology , electrical engineering , physics , oceanography , engineering , chromatography , geology
In this study, a double frequency Nd: YAG deposited by Pulsed Laser Deposition (laser beam 1064 nm, 6 Hz repetition rate and 10 ns pulse duration) were used for a thin Cr 2 O 3 deposit on glass substrate. Many growth parameters have been considered to specify the optimum condition, namely substrate temperature at room temperature, oxygen pressure (2.8×10-4 mbar), laser energy (600) mJ and the number of laser shots was 500 pulses. The thickness was of about 160 nm and annealing temperature at (300, 400 and 500) °C. Using DC method, the conductivity and Hall coefficient of Cr 2 O 3 films were measured. The sensing properties of the p-type (Hall coefficient was positive) films for NO 2 gas have been studied, and the result revealed that the Cr 2 O 3 films have low sensitivity at room temperature, and it’s improved by increasing the annealing temperature to 500° C.