Open AccessVariation of etching time on formation of porous silicon on p-type Si (111) using electrochemical anodization method
Author(s) -
Sehati,
Siti Wijayanti,
Risa Suryana
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1825/1/012067
Subject(s) - anodizing , etching (microfabrication) , materials science , porous silicon , silicon , surface finish , anode , porosity , foil method , analytical chemistry (journal) , surface roughness , optoelectronics , optics , nanotechnology , composite material , electrode , chemistry , aluminium , layer (electronics) , physics , chromatography
Porous silicon (PSi) has been formed on p-type Si (111) substrates using electrochemical anodization method. Silicon surfaces were anodized in HF (40%) dan ethanol (96%) solution with a ratio of 1:1. Anodization time was varied at 6, 8, 10 and 12 min with current density was maintained constant at 80 mA/cm 2 . Platinum foil was as a cathode while silicon was as an anode with a distance of 5 cm. The optical reflectance of the sample was determined using UV-Vis Spectrophotometer and surface morphology was observed using AFM. AFM’s images could determine the depth, width and roughness of PSi. The reflectance of PSi on Si (111) decreased with increasing the etching time. It indicated that many photons were trapped inside the porous. AFM images confirmed that the depth, the width, and the roughness of PSi increased with the increasing of the etching time. It is considered that the etching direction worked in the vertical and horizontal ways.