Open AccessGrowth of TiO2:Au thin films on Si substrates by Spin coating method
Author(s) -
Eko Supriyanto,
Agus Subekti,
Dwi Sabda Budi Prasetya
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1816/1/012119
Subject(s) - materials science , rutile , anatase , spin coating , thin film , titanium dioxide , titanium , analytical chemistry (journal) , band gap , chemical engineering , mineralogy , nanotechnology , metallurgy , photocatalysis , catalysis , chemistry , optoelectronics , organic chemistry , engineering
Thin titanium dioxide: gold (TiO 2 :Au) films are grown on n-type Si(100) substrates by spin coating, using 97% pure titanium (IV) isopropoxide [TTIP, Ti(O(C 3 H 7 ) 4 ] as a metal-organic precursor and powdered gold oxide (Au 2 O 3 ) as a dopant. The Au 2 O 3 was dissolved in tetrahydrofuran (C 4 H 8 O) to a concentration of 0.2 M, and this was then mixed with the TTIP in a 1:4 ratio. This experiment used a TTIP buffer layer to reduce lattice mismatch between the substrate and the film. The growth temperature was varied from 400°C to 550°C with an interval of 50 °C during deposition of TiO 2 :Au films, in which the experimental results show that the grown film exhibited rutile (002) (R (002)) crystal planes for all temperature conditions. In addition, while the films were grown at a temperature of 400 °C and 450 °C showed anatase (211) planes, the layers realized with a temperature of 450°C and 550°C exhibited rutile (200) planes. Increasing the amount of Au incorporation within a film will decrease its bandgap energy. The 500°C films showed a crystalline domain size in the R (002) plane of around 20.38 nm, making it a promising candidate base material for use in carbon monoxide (CO) gas sensors.