Open AccessThe effect of dopant material to optical properties: energy band gap Tin Oxide thin film
Author(s) -
Aris Doyan,
Susilawati Susilawati,
Lalu Muliyadi,
Syamsul Hakim,
Haris Munandar,
Muhammad Taufik
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1816/1/012114
Subject(s) - band gap , indium , materials science , doping , dopant , thin film , indium tin oxide , aluminium , analytical chemistry (journal) , tin , optoelectronics , nanotechnology , metallurgy , chemistry , chromatography
The synthesis of the SnO 2 thin film with doped materials of aluminum, fluorin indium, a combination of aluminum and indium, a combination of aluminum and fluorine, an a combination of the three doping agents, namely aluminum, fluorine, and indium have be successfully carried out. The purpose of this synthesis is to determine the effect of the vario doping materials on the resulting bandgap energy value. The thin layer was synthesized usi the sol-gel spin coating technique with the ratio of the base material and doping material us were 95: 5% and 85: 15%. The results showed that the higher the doping materi concentration, the resulting bandgap energy value decreased. In addition, the highest bandg energy value is found in the SnO 2 thin film with indium doping, namely for direct 3.62 eV (9 5% percentage) and 3.59 eV (percentage 85: 15%), while the indirect bandgap energy value 3, 92 eV (percentage 95: 5%) and 3.67 eV (percentage 85: 15%). The lowest energy band g value is found in the SnO 2 thin film with a combination of the three doping aluminum, fluorin and indium, namely for direct 3.50 eV (95: 5% percentage) and 3.41 eV (percentage 85: 15% while the energy band gap value is indirect. namely 3.81 eV (percentage 95: 5%) and 3.55 e (percentage 85: 15%). All the energy band gap range in semiconductor materials.