Open AccessSimulation of Hall Effect in Semiconductor for Current Sensors Applications
Author(s) -
Natheer B. Mahmood,
Ali Hamodi,
Zahraa M. Jaffar,
Farqad R. Saeed
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1804/1/012139
Subject(s) - hall effect sensor , hall effect , magnetic field , voltage , semiconductor , electrical engineering , electronic engineering , current (fluid) , dimension (graph theory) , thermal hall effect , constant (computer programming) , quantum hall effect , computer science , engineering , physics , electrical resistivity and conductivity , mathematics , magnet , quantum mechanics , programming language , pure mathematics
Hall effect simulation program was designed using a numerical direct and iterative method. The validity of this program was checked by comparing it with practical results. This program can be used as the basis for designing electrical current sensors, magnetic sensors, and integrated circuits depending on Hall effect, Moreover the program support researchers for their practical tests. The designed program was used to study the effect of different parameters on the designing of sensors built on the Hall effect, these parameters are magnetic field, electrical current, type of semiconductor, and the dimension of material. The results showed that the Hall voltage is sensitive to the magnetic field and electric current changes, while the hall voltage is constant with a variation of the sample dimensions. The results showed that the Hall experiment is sensitive to these parameters, especially to the thickness. The simulation software results will enhance the practical applications of the sensors.