Open AccessCan enhancement in tunnelling width influence the final spintronic feature of two-dimensional nanostructure of graphitic carbon nitride-(graphene)- graphitic carbon nitride?
Author(s) -
Rinki Bhowmick,
Mausumi Chattopadhyaya,
Jit Chakraborty,
Barnadip Chakraborty,
Anusweta Roy,
Biswarup Neogi,
S. N. Koley,
Sabyasachi Sen
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1797/1/012046
Subject(s) - spintronics , quantum tunnelling , graphene , materials science , graphitic carbon nitride , nanostructure , nitride , biasing , ferromagnetism , condensed matter physics , nanotechnology , optoelectronics , physics , layer (electronics) , voltage , chemistry , biochemistry , photocatalysis , catalysis , quantum mechanics
Herein we present a theoretical foray on crucial role played by the graphitic tunnelling barrier in tuning spintronic feature of two-dimensional insulating graphene layer sandwiched between two ferromagnetic graphitic carbon nitride (g- C 4 N 3 ) electrodes. We mainly focused on the tuning of spin filter efficiency due to the alteration in tunnelling width. 100% spin filter efficiency reported at each tunnelling width. High degree of spin filter efficiency is restored even at finite bias over a wide range of bias range -1.0 V to +1.0 V. Entire observation have been explained by analysing transmission spectrum at zero bias and a molecular level origin of the observed spintronic response of the device have been provided by analysing the Molecular Projected Self-Consistent Hamiltonian states (MPSH) and transmission pathways of the system.