Open AccessEnergy Band Diagram of FTO/porous Silicon Heterostructure
Author(s) -
Hasan A. Hadi,
Raid A. Ismail
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1795/1/012016
Subject(s) - materials science , heterojunction , band diagram , porous silicon , scanning electron microscope , band gap , optoelectronics , silicon , tin oxide , doping , transmittance , nanotechnology , composite material
We have proposed for the first time the energy band diagram of fluorine doped tin oxide FTO/porous silicon PSi/n-Si heterostructure prepared by spray pyrolysis technique and laser assist-electrochemical etching ECE. The band line-up of the heterojunction was constructed from the electrical and optical properties of FTO and porous silicon. The electrical current-voltage and capacitance-voltage measurements showed the barrier height, ideality factor and built in voltage of the heterojunction were 1.4, 0.69 V and 0.70 V, respectively. The optical energy gap and the average of the optical transmittance of FTO film were 3.6 eV and 78% respectively. The morphology of porous silicon PSi and FTO film investigated by scanning electron microscope SEM. The elemental composition of FTO film was determined using energy dispersive x-ray.