Open AccessFeatures and consistent patterns of changes in properties of the system AIIIBV - ZnTe solid solutions
Author(s) -
I. A. Kirovskaya,
L. V. Novgorodtseva,
М. В. Васина,
Е. В. Миронова,
П. Е. Нор,
A. V. Yurieva,
N. V. Chernous,
O. Yu. Zhigarova,
В. И. Крашенинин
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1791/1/012117
Subject(s) - solid solution , raman spectroscopy , materials science , binary number , semiconductor , semiconductor materials , analytical chemistry (journal) , chemistry , optoelectronics , physics , metallurgy , optics , arithmetic , mathematics , chromatography
By the methods developed for the InSb-ZnTe, GaSb-ZnTe systems, in the regions of mutual solubility of the initial binary compounds (InSb and ZnTe, GaSb and ZnTe), solid solutions (InSb) x (ZnTe) 1-x , (GaSb) x (ZnTe) 1-x have been obtained. X-ray, IR and Raman spectroscopic, electrophysical studies of the obtained solid solutions (in comparison with the initial binary compounds and among themselves) have been carried out, following the results of which the obtained solid solutions have been certified as substitutional solid solutions with a cubic sphalerite structure. The information on multicomponent diamond-like semiconductors has been expanded. The acid-base properties of the InSb-ZnTe, GaSb-ZnTe systems components surfaces, varying in composition from weak acid to weakly basic, have been studied. General and distinctive features in the “behavior” of the InSb-ZnTe, GaSb-ZnTe systems solid solutions have been revealed. The relative influence of binary components on the type of dependences “property – composition” has been demonstrated and explained. Practical recommendations have been given for the use of solid solutions with the lowest pHiso values as materials for the manufacture of sensors for main gases trace contamination.