Open AccessSolid solutions of hetero- and homo-substitution of the AIIIBV-CdTe, AIIBVI-CdTe systems. Physical and chemical properties
Author(s) -
I. A. Kirovskaya,
А. О. Ekkert,
R. V. Ekkert,
N. V. Chernous,
О. В. Кропотин,
V. I. Kraseninin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1791/1/012115
Subject(s) - cadmium telluride photovoltaics , solid solution , semiconductor , solubility , sphalerite , analytical chemistry (journal) , materials science , chemistry , crystallography , mineralogy , nanotechnology , optoelectronics , chromatography , pyrite , metallurgy
In the regions of mutual solubility of the initial binary compounds (InP and CdTe, ZnS and CdTe), according to the specifically developed methods, solid solutions of the InP-CdTe, ZnS-CdTe systems have been obtained, certified based on the results of X-ray, micro-, submicroscopical, UV, infrared studies as substitutional solid solutions with a cubic sphalerite structure. Information on the multicomponent diamond-like semiconductors has been supplemented, including first-ever determined values of the average size (d av ), the mean number (n av ) of the predominant particles in the systems components, their forbidden bandwidth values and the surface structure. The acid-base properties of the obtained solid solutions surfaces and binary components of the systems, which are assigned to the weak-acid region (pH iso <7), have been studied. Prognosis concerning the increased activity of such surfaces towards the main gases have been made and proved. The concentration dependences of the studied bulk and surface properties have been established. They possess both smooth and extreme nature. The influence on the dependence type by the degree of difference in the values of the forbidden bandwidth of the initial binary components has been confirmed. The reverse trends in changes with the composition of density (ρ r ) and pH iso have been substantiated. The connection between the concentration dependences of bulk and surface properties has been revealed. The possibility of using such connection for a faster, more efficient search for the advanced materials for semiconductor gas analysis and, in particular, for the manufacture of sensors for the main gases trace contamination.