Open AccessComparison between the influence of mechanical vibration and junction temperature rise originated bond wires detachment on the characteristics of IGBT module
Author(s) -
Yiran Teng,
Liancheng Wang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1774/1/012061
Subject(s) - insulated gate bipolar transistor , junction temperature , reliability (semiconductor) , materials science , vibration , power (physics) , stress (linguistics) , matlab , structural engineering , optoelectronics , composite material , electrical engineering , computer science , engineering , acoustics , voltage , physics , linguistics , philosophy , quantum mechanics , operating system
As the main device in a power system, the IGBT module works in the frequent power cycle for a long time, resulting to the fluctuation of junction temperature and heavy mechanical stress loading. These two factors threaten the reliability of bond wires and the IGBT module significantly. This study aimed at improving the reliability of the semiconductor device. IGBT dual bridge module was used as the primary research object, establishing the relationship between the bond wires detachment and resistance. MATLAB was used for mathematical analysis to determine the quantitative influence of the two conditions on several static characteristics of the IGBT module. Our study provides more samples and references to monitoring the IGBT bond wires and demonstrates the difference and similarity of these two factors.