Open AccessThe Effect of Sn Dopant on the Electrical and Optical Properties of ZnO Thin Films
Author(s) -
Yasni Novi Hendri,
Muhammad Abiyyu Kenichi Purbayanto,
Sendi Nugraha Pratama,
Nabilah Zuhairah,
Yudi Darma
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1772/1/012013
Subject(s) - dopant , materials science , photoluminescence , doping , optoelectronics , sputter deposition , band gap , thin film , semiconductor , sputtering , analytical chemistry (journal) , nanotechnology , chemistry , chromatography
We study the electrical and optical properties of Sn-doped ZnO (SZO) films grown by DC-unbalanced magnetron sputtering. To study the electrical properties of the films, we perform current-voltage (I-V) measurement by using metal-semiconductor-metal configuration with Ag as a metal contact. The measurement is performed in the dark and under UV exposure condition to study the photodetection properties of the films. From the I-V curve, it shows that the sensitivity of SZO is dramatically enhanced compared to the undoped film. This enhancement is due to the role of Sn dopant, which gives more electrons to the system. Furthermore, UV-Visible spectra reveal that the band gap increase by introducing the Sn dopant. Photoluminescence spectra show SZO film exhibits a higher green emission intensity compared to ZnO film, which is related to the presence of oxygen vacancy. Our result is important to improve the functionality of ZnO for optoelectronic devices applications.