Open AccessA Comparative study by TCAD Simulation for two different planar n-on-p silicon particle detectors with different guard ring implant type
Author(s) -
Slimane Oussalah,
Mohammed Mekheldi,
Walid Filali,
Elyes Garoudja
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1766/1/012015
Subject(s) - silicon , fluence , electric field , optoelectronics , materials science , detector , guard (computer science) , irradiation , planar , atomic physics , physics , optics , nuclear physics , computer science , quantum mechanics , programming language , computer graphics (images)
In this paper, we compare two multi-guard ring geometries for n-on-p silicon particle detectors for high luminosity applications. One structure has p-type guard rings while the other has n-type guard rings with p-stop isolation between n+ implants. The pre-irradiation performance of the guard ring structures are studied as a function of oxide charge. It is found that for both structures, there is a value of oxide charge for which the breakdown voltage is maximum. The post-irradiation performance of the structures are evaluated with simulations up to a radiation fluence of 1×10 +16 neq/cm 2 using an existing three-level trap model for p-type FZ silicon. TCAD simulation has been used to simulate I-V characteristics, charge carrier concentration, electric field, and potential distribution.