Open AccessExcitation power density and temperature dependence of photoluminescence study on electron-irradiated GaAs middle cell of GaInP/GaAs/Ge triple-junction solar cell
Author(s) -
Gang Yan,
Y Y Liu,
Rui Wu,
Jingpeng Liu,
J L Wang,
R Wang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1765/1/012001
Subject(s) - photoluminescence , excitation , quenching (fluorescence) , electron , atomic physics , materials science , irradiation , power density , solar cell , trapping , band gap , recombination , molecular physics , chemistry , optoelectronics , physics , optics , fluorescence , power (physics) , nuclear physics , ecology , biochemistry , gene , biology , quantum mechanics
Excitation power density (2.603-9.196 W/cm 2 ) and temperature (10-300 K) dependence of photoluminescence (PL) measurements have been presented and discussed in detail for the carrier recombination mechanism and quenching of the GaAs middle cell in 1.0 MeV electron-irradiated GaInP/GaAs/Ge triple-junction solar cell. When the excitation power density increases, the PL intensity increases. The dependence of PL intensity on excitation power density is observed to be linear below 40 K, and becomes increasingly superlinear with increasing temperature and eventually quadratic at 300 K. The observed phenomenon revealed a competing mechanism between radiative and non-radiative recombination process of photogenerated carriers. However, with the increase of temperature, the PL intensity decreases, and strong thermal quenching phenomenon of PL intensity can be observed above 40 K. By analyzing with multiple centre model, it is due to the presence of thermally activated non-radiative recombination centres named E4 electron trap with an activation energy of ∼0.76 eV and named E5 electron trap with an activation energy of ∼0.96 eV.