Open AccessResistive switching kinetics of parylene-based memristive devices with Cu active electrodes
Author(s) -
А. Н. Мацукатова,
А. А. Миннеханов,
V. V. Rylkov,
В. А. Демин,
A. V. Emelyanov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1758/1/012025
Subject(s) - memristor , neuromorphic engineering , materials science , scalability , crossbar switch , parylene , nanosecond , resistive touchscreen , electrode , computer science , optoelectronics , voltage , biocompatibility , nanotechnology , electronic engineering , electrical engineering , artificial neural network , artificial intelligence , engineering , physics , telecommunications , laser , optics , quantum mechanics , database , metallurgy , composite material , computer vision , polymer
The temporal characteristics of the resistive switching process in parylene-based memristive devices with Cu electrodes are studied. It was found that the switching time of the structures is hundreds of nanoseconds at switching voltages less than 2 V. The median value of the estimated energy consumption does not exceed 3 nJ. Thus, it was shown that parylene-based memristors are effective in neuromorphic computing systems, including those trained by bio-inspired rules such as memristive STDP. The possibility of further reduction of the switching energies down to picojoules when the size of the memristors is reduced to 50x50 µm 2 (in crossbar architecture) is noted. Biocompatibility and scalability of the devices is also promising in the creation of energy-efficient wearable systems. The obtained results can be useful for further study of parylene-based memristors, in particular, for developing models of their performance.