Open AccessTemperature characteristics of Gate all around nanowire channel Si-TFET
Author(s) -
Firas Natheer Abdul-kadir,
Yasir Hashim,
Waheb Abduljabbar Shaif Abdullah
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1755/1/012045
Subject(s) - materials science , nanowire , optoelectronics , atmospheric temperature range , swing , channel (broadcasting) , threshold voltage , diode , nanosensor , voltage , electrical engineering , nanotechnology , engineering , physics , transistor , acoustics , meteorology
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), I ON /I OFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150°C. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions.