Open AccessAnalysis of ZVS Realization with Consideration of Secondary Parasitic Capacitance for High Frequency GaN-based LLC Resonant Converter under DCM Mode
Author(s) -
Linkai Li,
Run Min,
Dian Lyu,
Desheng Zhang,
Qiaoling Tong
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1754/1/012072
Subject(s) - capacitance , realization (probability) , parasitic capacitance , mode (computer interface) , materials science , voltage , resonant converter , electronic engineering , optoelectronics , converters , electrical engineering , physics , computer science , engineering , mathematics , electrode , statistics , quantum mechanics , operating system
LLC resonant converter can achieve zero voltage switching (ZVS) for primary side devices and zero current switching (ZCS) for secondary side rectifiers while operating in discontinuous conduction mode (DCM). However, the parasitic capacitance significantly affects the ZVS realization of primary side switches for high frequency GaN-based LLC converter. In order to reveal the influence, this paper analyses ZVS transition process with consideration of secondary parasitic capacitance in a high frequency GaN-based LLC resonant converter under DCM mode. Then, an accurate model during ZVS transition is derived. To verify the analysis and the derived model, a 250V rating input and 270V/6.6A rating output GaN-based LLC converter prototype operating at 500 kHz is built. The experimental results are consistent with the theoretical analysis.