Open AccessThe process of pore formation on a textured silicon substrate during electrochemical etching: 3D model
Author(s) -
I A Shishkin,
D. A. Lizunkova,
Н. В. Латухина
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1745/1/012004
Subject(s) - etching (microfabrication) , porous silicon , scanning electron microscope , silicon , materials science , substrate (aquarium) , porosity , nanotechnology , process (computing) , isotropic etching , optoelectronics , composite material , computer science , geology , oceanography , layer (electronics) , operating system
The paper presents the results of modeling the mechanism for producing porous silicon on a textured surface. For various technological tasks, it is important to learn how to control the parameters of electrolytic etching to obtain the desired result. On 3D maps of the distribution of potential and etching currents, you can see that the vectors go around the pyramids and pointly etch certain sections of the surface. Confirmations of this can be seen in photographs of a scanning electron microscope and a scanning probe microscope. A detailed description of pore formation on textured porous silicon substrates has not yet been found in other works.