Open AccessResearch High Temperature Characteristics of 4.5kV New Power Semiconductor Device with Wave-based RC-GCT Structure
Author(s) -
Bo Zhao,
Xianghua Luo,
Chuan Tang,
Qingchao Song,
Lifu Lu,
XU Bao-bo
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1729/1/012005
Subject(s) - semiconductor , integrated gate commutated thyristor , materials science , semiconductor device , current (fluid) , safe operating area , power (physics) , power semiconductor device , voltage , electrical engineering , optoelectronics , voltage drop , thyristor , engineering , physics , nanotechnology , layer (electronics) , quantum mechanics
In this paper, the effect of temperature change on the static and dynamic characteristics of power semiconductor devices is simulated by ISE-TCAD software with 4.5 kV power semiconductor device wavy base regions RC-GCT. the results show that the forward voltage drop UF of the device increases with the increase of temperature at high current density, the forward opening and turning off time of the device becomes longer, and the trailing current increases. The results of this study have certain reference value for the design and development of IGCT for new power semiconductor devices.