Open AccessCut-line Analysis and Parameters’ Extraction of Zinc Telluride Absorber Material based Multi-layer Solar Cell
Author(s) -
Paritosh Chamola,
Poornima Mittal
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1714/1/012020
Subject(s) - solar cell , optoelectronics , materials science , photovoltaic system , cadmium telluride photovoltaics , layer (electronics) , zinc , open circuit voltage , cadmium zinc telluride , heterojunction , optics , voltage , electrical engineering , nanotechnology , physics , engineering , metallurgy , detector
In present paper the ZnTe (Zinc Telluride) solar cell with heterojunction structure is developed and its electrical performance are explored. The ZnTe act as an absorber type layer, CdS (Cadmium-Sulphide) is the buffer layer and ZnO (Zinc-Oxide) is the window type layer in our solar cell. The numerical studies were done using Silvaco-Atlas which is a mathematical device-simulator. The ZnTe solar cell is simulated and various devices parameters such as open circuit voltage, fill factor etc. are extracted on different absorber-layer thickness sweeping from 0.5 to 2.5 µm keeping the thickness of other layers constant. This is followed by cutline investigation of the Zinc Telluride solar cell so as to comprehend the device’s physical science as photovoltaic cell. The solar cell is examined via a parallel (i.e. horizontal) cut-line drown inside ZnTe absorber type layer the of photovoltaic cell positioned at the junction of the absorber type and buffer type layer. The ZnTe solar cell shows good performance with 62.89% fill factor.