Open AccessEffect of IR irradiation on the various properties of chemically prepared zinc sulphide thin films
Author(s) -
Kaniyamkandy Ribin,
N. Navya,
K. Naseema
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1706/1/012025
Subject(s) - crystallinity , irradiation , thin film , zinc , materials science , substrate (aquarium) , chemical bath deposition , infrared , band gap , deposition (geology) , chemical engineering , analytical chemistry (journal) , nuclear chemistry , optoelectronics , nanotechnology , chemistry , optics , metallurgy , composite material , organic chemistry , physics , engineering , nuclear physics , paleontology , oceanography , sediment , geology , biology
Zinc sulphide thin films have been deposited on glass substrate using simple low cost chemical bath deposition method at 80°C for 2 hours. One of the samples is post irradiated with infrared radiation for one hour. Structural, optical and morphological studies were done for both samples and the results were compared. XRD pattern of the IR irradiated sample shows enhanced crystallinity. Optical band gap was found to be 3.31eV for pure ZnS and 3.93 eV for the IR irradiated ZnS thin film. The films prepared by using this facile method are suitable for optoelectronic applications.