Open AccessThe Study of Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistors Based on TCAD
Author(s) -
Zhicheng Fang
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1699/1/012006
Subject(s) - high electron mobility transistor , materials science , optoelectronics , transistor , heterojunction , degradation (telecommunications) , lattice (music) , semiconductor , technology cad , electronic engineering , electrical engineering , chemistry , physics , voltage , engineering , biochemistry , acoustics , cad
As the third-generation semiconductor material, GaN has the characteristics of large forbidden band width and high electron mobility. The AlGaN/GaN high electron mobility transistors (HEMTs) have also attracted attention in recent years. In this paper, the effect of self-heating on device degradation was explored through theoretical analysis and software simulation. Firstly, Silvaco TCAD was used to establish an AlGaN/GaN HEMT single heterojunction model. Then, its self-heating effect was explored by simulation. Besides, it was compared with the theoretical analysis results. The control experiment method was used to compare the I-V output characteristic curve of the device when the self-heating effect was considered, and the relationship between the lattice temperature and the device degradation was researched. According to the research result, when the device is affected by the self-heating effect, the electrical performance of the device degrades obviously due to the increase of lattice temperature.