Open AccessTechnology of nanoplanar surface preparation of GaSb and InP substrates
Author(s) -
A M Zhirnov,
A. E. Marichev,
V. S. Epoletov,
N. D. Prasolov,
Roy Levin,
B. V. Pushnyĭ
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012248
Subject(s) - epitaxy , materials science , annealing (glass) , surface roughness , surface finish , optoelectronics , substrate (aquarium) , layer (electronics) , nanotechnology , composite material , oceanography , geology
In this work, we studied the surface quality dependence of GaSb and InP substrates prepared by various methods of pre-epitaxial preparation, specifically, etching, annealing, and growing a buffer layer. Our main goal was to obtain the most efficient method of pre-epitaxial treatment, which allows preparing substrates with the best surface quality. The experimental results were evaluated by the parameter of the average roughness of the substrate. As a result a combination of the methods of pre-epithelial preparation of GaSb and InP substrates was selected, which made it possible to obtain a root-mean-square surface roughness about 0.6–0.8nm.