Open AccessFormation of SiO2 hard mask using dry etching and nanosphere lithography
Author(s) -
Ekaterina Vyacheslavova,
И. А. Морозов,
D. A. Kudryashov,
A. S. Gudovskikh
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012188
Subject(s) - dry etching , nanosphere lithography , etching (microfabrication) , lithography , reactive ion etching , materials science , substrate (aquarium) , plasma etching , nanotechnology , photolithography , optoelectronics , analytical chemistry (journal) , chemistry , fabrication , chromatography , layer (electronics) , medicine , geology , oceanography , alternative medicine , pathology
The features of the formation of a SiO 2 hard mask using dry etching and nanosphere lithography are considered in the paper. A series of experiments was carried out using a variation of plasma etching parameters such as ICP and RF power, pressure as well as a substrate temperature. As a result, optimal parameters were found to obtain both good selectivity and high etching rate.