Open AccessPhotoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator
Author(s) -
N. V. Bazlov,
A. M. Danishevskiı̆,
A. Derbin,
I. Drachnev,
I. M. Kotina,
O. I. Kon’kov,
A M Kuzmichev,
M. S. Lasakov,
Maxim V. Trushin,
E. Unzhakov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012181
Subject(s) - materials science , optoelectronics , photocurrent , silicon , photoelectric effect , wafer , aluminium , silicon on insulator , nitride , insulator (electricity) , quantum tunnelling , silicon nitride , electrode , electrical resistivity and conductivity , diode , layer (electronics) , nanotechnology , composite material , electrical engineering , chemistry , engineering
Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.