Open AccessRoom temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers
Author(s) -
A. A. Klimov,
R. E. Kunkov,
T. S. Lukhmyrina,
B. A. Matveev,
Н. М. Лебедева,
M. A. Remennyĭ
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012180
Subject(s) - photodiode , heterojunction , optoelectronics , materials science , double heterostructure , substrate (aquarium) , semiconductor , semiconductor laser theory , oceanography , geology
Narrow gap heterostructures consisting of two double heterostructures (N-InAsSbP/n-InAs/P-InAsSbP and P-InAsSbP/n-InAs 0.9 Sb 0.1 /N-InAsSbP) grown sequentially onto a n+-InAs substrate and further processed into a two-color photodiode with individual sensing operation at 3.3 and 4 have been studied. Presented and discussed are the photodiode construction details, I-V characteristics as well as sensitivity and detectivity spectra measured at room temperature.