Open AccessGain spectra of lasers based on transitional dimension active region
Author(s) -
G. O. Kornyshov,
N. Yu. Gordeev,
A. S. Payusov,
A. A. Serin,
Yu. M. Shernyakov,
S. A. Mintairov,
N. A. Kalyuzhnyy,
M. V. Maximov,
A. E. Zhukov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012177
Subject(s) - active layer , quantum well , optoelectronics , heterojunction , quantum dot , laser , spectral line , quantum dot laser , materials science , semiconductor laser theory , semiconductor , enhanced data rates for gsm evolution , physics , optics , layer (electronics) , nanotechnology , telecommunications , computer science , quantum mechanics , thin film transistor
We present an experimental study of the optical gain of edge-emitting lasers based on a new type of quantum-sized InGaAs active medium grown on GaAs substrates, which we refer to as quantum-well-dots (QWDs). It is shown that the single layer QWD active region provide at least 33 cm −1 optical gain at 1030 nm comparable to the values typical for InGaAs quantum wells (QWs), and the width of the gain spectra characteristic for InAs quantum dots (QDs). Thus, QWD active region combines the advantages of both QW and QD heterostructures and has a great potential for improving characteristics of various semiconductor devices.