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The GaAs laser photoconverter (λ 809 nm) current flow mechanisms at the temperature range of 100-420 K
Author(s) -
M. A. Mintairov,
V. V. Evstropov,
S. A. Mintairov,
M. V. Nakhimovich,
М. Z. Shvarts,
N. A. Kalyuzhnyy
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012170
Subject(s) - saturation current , atmospheric temperature range , photoelectric effect , saturation (graph theory) , range (aeronautics) , materials science , electroluminescence , band gap , current (fluid) , atomic physics , laser , condensed matter physics , energy flow , optoelectronics , chemistry , energy (signal processing) , voltage , optics , thermodynamics , physics , nanotechnology , mathematics , layer (electronics) , quantum mechanics , combinatorics , composite material
The temperature dependences of the diffusion and recombination saturation currents and the energy gap have been obtained for a GaAs photoelectric converters. Saturation currents by IV characteristic analysis, and the energy gap by electroluminescence peak position have been determined. It has been shown that the relationship between saturation currents and energy band gap is characterized by the only parameter J z (current invariant). At the temperature range of 100 -420 K this parameter does not depend on the temperature.

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