Open AccessInvestigation of the temperature dependences of the I-V characteristics of p-Si/MoOx selective contacts
Author(s) -
A. A. Maksimova,
Artem Baranov,
D. A. Kudryashov,
A. S. Gudovskikh
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012169
Subject(s) - materials science , atmospheric temperature range , band diagram , capacitance , range (aeronautics) , diagram , voltage , condensed matter physics , current (fluid) , analytical chemistry (journal) , optoelectronics , electrical engineering , chemistry , thermodynamics , heterojunction , electrode , physics , composite material , statistics , mathematics , chromatography , engineering
In this article the temperature dependences of selective contacts based on MoO x were studied. The p-Si/MoO x /Al structure was fabricated. Current-voltage and capacitance-voltage characteristics in the temperature range from 80 to 300K were measured. Band diagram was also calculated to reveal potential barriers location and its influence on charge carrier transport.