Open AccessMicrostructure and morphology of 2D arrays of Ge quantum dots in a Si/Al2O3 matrix
Author(s) -
L. A. Sokura,
V. N. Nevedomskiy,
М. В. Байдакова,
A. A. Levin,
A. V. Belolipetsky,
I. N. Yassievich,
А. В. Ершов,
Н. А. Берт
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012135
Subject(s) - materials science , crystallite , microstructure , annealing (glass) , transmission electron microscopy , crystallography , quantum dot , silicon , germanium , nanotechnology , composite material , optoelectronics , metallurgy , chemistry
The paper presents the results of the microstructure and morphology study of two-dimensional Ge QD arrays in a Si/Al2O3 matrix formed by annealing multilayer periodic structures with Ge nanolayers in a Si/Al2O3 matrix. The distinctive features of samples in the series are the location and thickness of the Si barrier layers between Ge and aluminium oxide matrix. X-ray reflectometry and diffractometry and transmission electron microscopy studies have shown that large Al 6 Ge 5 crystallites are formed and the multilayer structure is destroyed after annealing of the multilayer sample Al 2 O 3 /Ge without Si. It was found that the presence of Si barrier layers in multilayer Al 2 O 3 /Si/Ge structures reduces the interdiffusion of Al and Ge, but Ge 1-x Si x nanocrystallites are formed as a result of Si and Ge interdiffusion. Thus, the introduction of Si barrier layer into the Al 2 O 3 /Ge structure allowed obtaining of two-dimensional arrays of Ge 1-x Si x nanocrystallites with the penetration of Si up to 0.64.