Open AccessStructural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates
Author(s) -
P. S. Avdienko,
Dmitry V. Kolyada,
Д. Д. Фирсов,
О. С. Комков,
I. V. Sedova,
Sergey Sorokin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012131
Subject(s) - molecular beam epitaxy , exciton , photoluminescence , materials science , acceptor , anisotropy , optoelectronics , layer (electronics) , scanning electron microscope , epitaxy , crystallography , molecular physics , analytical chemistry (journal) , condensed matter physics , chemistry , optics , nanotechnology , physics , composite material , chromatography
Quasi-two-dimensional GaTe layers were grown by molecular beam epitaxy on GaAs (001) substrates at T s = 450–520°C. The effect of the growth temperature on the GaTe surface morphology has been studied by scanning electron microscopy. It is shown that GaTe layer grown at high T s = 520°C exhibits pronounced surface relief anisotropy. This sample demonstrates also near band-edge photoluminescence (PL) at T = 11K with the peak energy of ∼1.72 eV, which can be associated with the emission of excitons bound at the acceptor. The nature of 1.45 eV and 1.57 eV peaks appearing in the PL spectra is also discussed in detail.