Open AccessDLTS spectra of radiation-induced defects in silicon detectors with heavily damaged Bragg peak region
Author(s) -
Д. Д. Митина,
V. Eremin,
E. Verbitskaya,
И. В. Еремин
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012071
Subject(s) - materials science , fluence , silicon , capacitance , spectral line , bragg peak , irradiation , vacancy defect , radiation , deep level transient spectroscopy , optoelectronics , atomic physics , molecular physics , condensed matter physics , optics , chemistry , physics , nuclear physics , electrode , astronomy
The investigation is focused on the defects in silicon p + -n-n + detectors irradiated with the 53.4 MeV 40 Ar ions, which generate a nonuniform defect distribution including a heavily damaged region inside the Bragg peak. The dependences of the bulk generation current and of the capacitance on bias voltage and the spectra of radiation-induced defects demonstrate new features: a step in the current rise, a region with a practically constant capacitance, and abnormal dependence of the peak amplitudes of vacancy-related defects on fluence. The changes of the DLTS spectra are assigned to the influence of silicon properties inside the Bragg peak region acting as a highly compensated insulating layer.