Open AccessAnomalously low ionization energy of phosphorus atoms in the electric field of silicon p-n junctions in the temperature range 10-20 K
Author(s) -
A. Shepelev,
V. Eremin,
E. Verbitskaya
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012067
Subject(s) - ionization , atomic physics , silicon , electric field , ion , phosphorus , range (aeronautics) , electron , thermal ionization , impact ionization , ionization energy , arrhenius plot , chemistry , analytical chemistry (journal) , materials science , activation energy , electron ionization , physics , optoelectronics , organic chemistry , quantum mechanics , composite material , chromatography
The work extends the study of the ionization properties of phosphorus atoms as trapping/emission centres in the electric field of silicon p-n junctions operating at low temperatures. The goal is describing the ionization of phosphorus atoms by a single effective parameter, the ionization energy of phosphorus energy levels E ion . An approach to the study is based on manipulating the space charge concentration N eff in a nonirradiated silicon p + /n/n + structure via filling phosphorus donors with electrons supplied by a laser pulse. Extracting the N eff from the experimental current pulse response shapes recorded at variable temperature and pulse repetition rate allowed building Arrhenius plot for evaluating E ion in the electric field. This value is shown to be 6.4±1.1 meV that is paradoxically low, being about 7 times less than the referred data.