Open AccessEffect of passivation on the n-InP optical and electronic properties
Author(s) -
Е. В. Иванова,
P. A. Dementev,
T. V. L’vova,
М. В. Лебедев
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1697/1/012061
Subject(s) - cathodoluminescence , passivation , luminescence , materials science , trapping , optically stimulated luminescence , optoelectronics , irradiation , electron , intensity (physics) , electron beam processing , atomic physics , molecular physics , chemistry , optics , nanotechnology , physics , ecology , layer (electronics) , quantum mechanics , nuclear physics , biology
The effect of sulphur surface passivation on the optical and electronic properties of InP was investigated. In the work, the approach of simultaneous measurement of the dynamics of the absorbed current and cathodoluminescence under continuous electron beam irradiation is used. This approach allows us to study the trapping of charge by traps and their influence on the luminescent properties. It was shown that hole traps are observed in the samples; moreover, the localization of a positive charge leads to an increase in the luminescence intensity. Passivation was found to significantly reduce the number of hole traps.