Open AccessDefect properties of multilayer GaP/Si nanoheterostructures grown by plasma deposition
Author(s) -
Artem Baranov,
И. А. Морозов,
A. V. Uvarov,
D. A. Kudryashov,
A. S. Gudovskikh
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012203
Subject(s) - materials science , wafer , silane , silicon , plasma , band gap , capacitance , doping , optoelectronics , deposition (geology) , argon , conduction band , analytical chemistry (journal) , chemistry , composite material , electron , electrode , paleontology , physics , organic chemistry , quantum mechanics , chromatography , sediment , biology
Periodic nanoheterostructures GaP/Si grown by PE-ALD with argon plasma treatment on GaP wafers were studied by capacitance methods. The response from silicon quantum well was clearly observed by capacitance-voltage characteristics as peak on profile of concentration of free charge carriers in sample GaP (50 cycles)/Si (22 s) with 7 wells. It is explained by higher doping of GaP layers due to higher total time of silane flow in growth process unlike samples with smaller numbers of silicon wells or lower time of silicon deposition. Further, response from defect level was observed with capture cross-section (1–10)×10 −15 cm −2 , and its energetic level decreases from 0.51 eV to 0.39 eV under conduction band with increasing of total time of silane flow.