Open AccessNumerical study of Schottky diode based on single GaN NW on Si
Author(s) -
Konstantin Shugurov,
А. М. Можаров,
I. S. Mukhin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012172
Subject(s) - schottky diode , schottky barrier , materials science , doping , condensed matter physics , optoelectronics , diode , cutoff frequency , nanowire , semiconductor , quantum tunnelling , fermi level , brillouin zone , relaxation (psychology) , physics , psychology , social psychology , quantum mechanics , electron
Numerical modelling of Schottky diode formed by single GaN nanowire on Si substrate was performed. Two metals, namely, gold and platinum forming the Schottky barrier were considered. The potential barrier height was calculated taking into account occurrence of image force as well as Fermi level pinning at metal/semiconductor interface. Volt-ampere characteristics were obtained for different NW doping levels considering Wentzel–Kramers–Brillouin tunneling model. Cutoff frequencies are evaluated from current-time relaxation curves for different NW lengths and doping levels. It is shown that such diode structure demonstrates high-speed performance with cutoff frequency in the range from 0.1 to 0.9 THz for both studied metals.