Open AccessdV/dt testing of high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages
Author(s) -
D A Knyginin,
S. B. Rybalka,
E. A. Kulchenkov,
A.M. Demidov,
N. A. Zhemoedov,
Alexandr Drakin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012160
Subject(s) - schottky diode , materials science , diode , optoelectronics , metal , voltage , schottky barrier , electrical engineering , metallurgy , engineering
The dV / dt values for 4H-SiC Schottky type diodes with different type packages have been determined experimentally. It is determined that experimental dV / dt values for 4H-SiC Schottky type diodes in metal-polymeric packages (SOT-89, QFN, PQFN, TO-220) are varying in interval of 645¸1103 V/ns. It is established that the dV/dt dependence on maximal amplitude of reverse voltage demonstrate nonlinear character (close to parabolic dependence) for all studied SiC Schottky type diodes in different type packages.