Open AccessBipolar resistive switching in memristors based on Ge/Si(001) epitaxial layers
Author(s) -
О. Н. Горшков,
Д. О. Филатов,
S. Koveshnikov,
М. Е. Шенина,
O. A. Soltanovich,
В. Г. Шенгуров,
С. А. Денисов,
V. Yu. Chalkov,
И. Н. Антонов,
Д. А. Павлов,
V. A. Vorontsov,
А. В. Круглов,
E. B. Yakimov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012158
Subject(s) - materials science , transmission electron microscopy , memristor , optoelectronics , epitaxy , layer (electronics) , resistive touchscreen , electric field , electrical conductor , nanotechnology , composite material , electrical engineering , physics , quantum mechanics , engineering
The Ag/Ge/Si(001) stacks with threading dislocations in Ge layer demonstrating the I-V curves typical for the bipolar resistive switching were investigated. Cross-sectional transmission electron microscopy and electron beam induced current measurement confirmed the resistive switching mechanism to be the formation of conductive filaments consisting of the Ag atoms across the entire Ge layer via the electric-field driven transport of Ag + ions along the threading dislocations.