Open AccessPlanar Schottky diode with a Γ-shaped anode suspended bridge
Author(s) -
Alexander Shurakov,
D. I. Mikhailov,
Ivan Belikov,
N. Kaurova,
T. Zilberley,
Anatoliy Prikhodko,
B. Voronov,
И. С. Васильевский,
Gregory Goltsman
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012154
Subject(s) - schottky diode , materials science , gallium arsenide , optoelectronics , diode , fabrication , planar , anode , terahertz radiation , etching (microfabrication) , heterojunction , substrate (aquarium) , schottky barrier , optics , layer (electronics) , nanotechnology , chemistry , geology , electrode , physics , medicine , alternative medicine , computer graphics (images) , oceanography , pathology , computer science
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.