Open AccessResearch of low noise pHEMT transistors in equipment for microwave radiometry using numerical simulation
Author(s) -
В. Г. Тихомиров,
А. Г. Гудков,
S. V. Agasieva,
V. B. Yankevich,
M. M. Popov,
S. V. Chizhikov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012150
Subject(s) - high electron mobility transistor , heterojunction , microwave , optoelectronics , noise (video) , gallium arsenide , transistor , materials science , monolithic microwave integrated circuit , electronic engineering , electrical engineering , computer science , engineering , telecommunications , amplifier , voltage , cmos , artificial intelligence , image (mathematics)
The numerical impact modeling of some external effects on devices based on AlGAs/InGaAs/GaAs heterostructures (pHEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure in the barrier region and to start the process of directed construction optimization of the devices based on AlGaAs/InGaAs/GaAs pHEMT with the aim of improving their noise characteristic.