Open AccessSize effect in the kinetic properties in “sized” films of Bi2Se3 topological insulator
Author(s) -
V. V. Chistyakov,
A. N. Domozhirova,
Jie Huang,
В. В. Марченков
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012147
Subject(s) - topological insulator , bismuth , hall effect , kinetic energy , condensed matter physics , materials science , semimetal , topology (electrical circuits) , electrical resistivity and conductivity , insulator (electricity) , thin film , nanotechnology , physics , optoelectronics , band gap , quantum mechanics , mathematics , combinatorics , metallurgy
The Hall resistivity and magnetoresistivity of topological insulator Bi 2 Se 3 thin films with a thickness from 30 nm to 75 nm in the temperature range from 4.2 to 80 K and magnetic fields of up to 10 T were measured. A size effect in the kinetic properties of bismuth selenide films was studied, i.e. a dependence of the Hall coefficient and magnetoconductivity of film dimensions. It was suggested that a similar size effect should be observed in other kinetic electronic properties, both of topological insulators and topological semimetals.