Open AccessAnomalous Nernst-Ettingshausen effect in diluted magnetic semiconductors
Author(s) -
Yu. M. Kuznetsov,
М. В. Дорохин,
A. V. Kudrin,
M. V. Ved,
В. П. Лесников
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012145
Subject(s) - nernst equation , nernst effect , condensed matter physics , hall effect , magnetic field , ferromagnetism , materials science , semiconductor , magnetic semiconductor , chemistry , physics , electrode , optoelectronics , quantum mechanics
The magnetic field dependences of the Hall and Nernst-Ettingshausen effects in (In, Fe)Sb, (Ga, Fe)Sb, (Ga, Mn)As diluted magnetic semiconductors were investigated. The samples were fabricated on a semi-insulating GaAs substrates by pulsed laser deposition in vacuum. The manifestation of the anomalous Nernst-Ettingshausen effect along with the anomalous Hall effect in manganese-containing structures was shown experimentally. It is demonstrated that the difference in the magnetic field dependences of the Hall and Nernst-Ettingshausen effects in systems with Mn and Fe is due to the different nature of ferromagnetism.