Open AccessElectronic transport features of MoTe2 caused by quenching
Author(s) -
В. В. Марченков,
A. N. Domozhirova,
С. В. Наумов,
С. М. Подгорных,
V. V. Chistyakov,
P. S. Korenistov,
Jung-Chun Andrew Huang
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012144
Subject(s) - quenching (fluorescence) , materials science , condensed matter physics , field (mathematics) , magnetic field , physics , optics , mathematics , pure mathematics , fluorescence , quantum mechanics
The electro- and magnetoresistivity of MoTe 2 single crystals before and after quenching were measured at temperatures from 1.8 to 300 K and in magnetic fields of up to 9 T. It was demonstrated that quenching can lead to strong changes in values of the electro-and magneresistivity studied as well as in their temperature and field dependences. The peculiarities of these electronic transport characteristics changes were studied in detail.