Open AccessCapacitance characterization of silicon nanowires formed by cryogenic dry etching
Author(s) -
Artem Baranov,
D. A. Kudryashov,
Liliia N. Dvoretckaia,
И. А. Морозов,
A. V. Uvarov,
Ekaterina Vyacheslavova,
Konstantin Shugurov,
A. S. Gudovskikh
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012089
Subject(s) - wafer , etching (microfabrication) , materials science , silicon , dry etching , analytical chemistry (journal) , nanowire , capacitance , spectroscopy , reactive ion etching , silicon nanowires , optoelectronics , nanotechnology , chemistry , layer (electronics) , electrode , chromatography , physics , quantum mechanics
Arrays of silicon nanowires were fabricated by dry etching in the ICP mode in a mixture of SF 6 /O 2 gases at a temperature of-140 °C. Defects located near the wafer surface with E a =0.30 eV, σ=(1–10)×10 −14 cm 2 and E a =0.68–0.74 eV, σ=1×10 −15 cm 2 were detected by admittance spectroscopy and deep-level transient spectroscopy. An increase in the dry etching time from 3.5 min (for the 1 st sample) to 4.5 min (for the 2 nd sample) leads to an rise of their concentration, but additional stage of wet etching in 4% KOH during 30 s leads to a vanish of the response from the first sample ( N T ˂10 11 cm −3 ), while for the second sample the defect concentration becomes in two times lower.