Open AccessStudy of SiNx based antireflection coating for GaP/Si heterojunction solar cells
Author(s) -
Ekaterina V. Anokhina,
A. V. Uvarov,
A. S. Gudovskikh
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012080
Subject(s) - plasma enhanced chemical vapor deposition , silane , materials science , heterojunction , chemical vapor deposition , deposition (geology) , layer (electronics) , solar cell , coating , plasma , optoelectronics , silicon , nanotechnology , composite material , paleontology , physics , quantum mechanics , sediment , biology
This paper presents the results of a research of the optical properties of SiN x layers with various compositions obtained by plasma-enhanced chemical vapor deposition (PECVD). The growth rate and optical properties of SiN x obtained using SiH 4 and N 2 at low temperature were determined. A strong dependence of the optical properties of SiN x on concentration of silane in the gas mixture during deposition was demonstrated. Antireflection coatings for GaP/Si solar cells were fabricated based on developed SiN x layer.