Open AccessOptical switching in multilayer structures based on Ge2Sb2Te5
Author(s) -
N. M. Tolkach,
N. V. Vishnyakov,
Petr Lazarenko,
А. А. Шерченков,
A U Sudakova,
D R Nazimov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012075
Subject(s) - materials science , absorption (acoustics) , transmittance , reflection (computer programming) , wavelength , laser , optoelectronics , amorphous solid , nanosecond , layer (electronics) , optics , optical switch , chemistry , crystallography , nanotechnology , physics , computer science , composite material , programming language
In this work, we have studied the phase switching in structures based on the Ge 2 Sb 2 Te 5 (GST) composition and their optical parameters of reflectivity and transmissivity at 1550 nm wavelength after exposure to the pulse of nanosecond laser at 403 nm wavelength. We investigated 24 nm GST single-layer structure and found about 50% optical losses due to the double reflection and transmission at 1550 nm radiation. To achieve the least optical losses, we added additional SiO 2 , Si and Si 3 N 4 layers to the structure. This allowed reducing optical losses up to 5 and 4% for absorption and undesirable reflection, respectively, for the amorphous GST layer, and 16 and 5% for absorption and undesirable transmittance, respectively, for the crystalline GST layer.