Open Access1.55 µm range edge-emitting laser diodes based on InGaAs/InGaAlAs superlattice and InGaAs quantum wells
Author(s) -
S. S. Rochas,
I. I. Novikov,
A. V. Babichev,
A. G. Gladyshev,
E. S. Kolodeznyi,
L. Ya. Karachinsky,
Yu. K. Bobretsova,
A. A. Klimov,
Yu. M. Shernyakov,
A. E. Zhukov,
A. Yu. Egorov
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012072
Subject(s) - superlattice , optoelectronics , materials science , molecular beam epitaxy , heterojunction , laser , quantum well , diode , epitaxy , semiconductor laser theory , optics , nanotechnology , layer (electronics) , physics
Two laser heterostructures with active region based on seven InGaAs quantum wells and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 1535-1565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edge-emitting laser diodes fabricated from grown laser heterostructures were studied and compared.