Open AccessWet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication
Author(s) -
V. V. Lendyashova,
K. P. Kotlyar,
R. R. Reznik,
T. N. Berezovskaya,
E. V. Nikitina,
І. П. Сошніков,
G. É. Cirlin
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1695/1/012047
Subject(s) - nanowire , materials science , etching (microfabrication) , photoluminescence , fabrication , optoelectronics , isotropic etching , substrate (aquarium) , metalorganic vapour phase epitaxy , nanotechnology , crystal (programming language) , layer (electronics) , epitaxy , medicine , oceanography , alternative medicine , pathology , geology , computer science , programming language
In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN nanowires along semi-polar and non-polar direction for nanowires with Ga-polar crystal structure. The diameter of the InGaN NWs decreases from 200-100 to 30-40 nm. After etching process, the intensity photoluminescence (PL) of nanowires and uniformity PL signal at all sample area increase.